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A screenshot of the study published in the journal Nature Materials.
A team of Chinese researchers has developed a platform that has realized, for the first time in the world, high-pressure in-situ quantum magnetic detection based on silicon vacancy defects in silicon carbide.
This technique may shed light on the mechanism behind the occurrence of superconducting, which is the ability of certain materials to conduct direct current electricity without any energy loss, under certain conditions, including those involving high pressure. It may also pave the way for exploring new quantum materials.
Using optically detected magnetic resonance technology, they observed the pressure-induced magnetic phase transition of a magnet at about seven gigapascals, according to the study published in the journal Nature Materials.
The work is "quite interesting" and could "open the door to new studies of quantum materials," said a peer reviewer of the paper.
An illustration image from the published study: a. Schematic diagram of moissanite anvil cell and detection of magnetic samples by shallow silicon vacancy defects; b. Relationship of zero-field splitting of silicon vacancy defects with pressure; c. Magnetic phase transition detection of Nd2Fe14b materials; d. Tc-P phase diagram of YBCO superconducting material; e. Illustration of high-pressure in-situ magnetic detection based on silicon vacancy defects in silicon carbide. /HFIPS
The researchers, led by experts from the Hefei Institutes of Physical Science (HFIPS) under the Chinese Academy of Sciences as well as the University of Science and Technology of China, used ion implantation to generate shallow silicon vacancy defects on the surface of a processed silicon carbide anvil cell to avoid the problem of temperature variations in high-pressure sensing.
(With input from Xinhua)
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Copyright © 2023 CGTN. 京ICP备16065310号
Disinformation report hotline: 010-85061466