Chinese find quantum Hall effect in 3D materials

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Researchers in China have found evidence of a new type of quantum Hall Effect existent in a three-dimensional topological semimetal.

The study, published in Nature on Monday, illustrated the path of the electrons in three-dimensional materials when exposed to a strong magnetic field, marking a great step for condensed matter physics research in a higher dimension.

The path of the electrons in three-dimensional materials when exposed to a strong magnetic field /Screenshot from CCTV

As one of the most important discoveries in condensed matter physics, the quantum Hall effect is considered the best example of quantization. Electrons in a quantum Hall system travel without losing their energy, thus always acting as perfect conducting systems with little energy consumption.

The discovery has shown great potential when applied in the development of low-energy consumption electron devices, and offered great insights and experience in topological quantum computing research.

While there has been intense interest in exploring the quantum Hall effect in higher dimensions, conditions for relevant observations are highly demanding.

"It took the research team three years to develop high-quality nanostructures of topological semimetals for the experiment," said Xiu Faxian, a professor in physics from Fudan University, who is the corresponding author of the research paper in Nature.

(With input from China Daily)